RJP65S08DWA, RJP65S08DWT - IGBT

Name: RJP65S08DWA
SKU: RJP65S08DWA-721583

Renesas

📥 Download Datasheet

RJP65S08DWA Datasheet Preview — This datasheet PDF includes multiple part numbers: RJP65S08DWA, RJP65S08DWT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	RJP65S08DWA, RJP65S08DWT
Manufacturer	Renesas
File Size	128.87 KB
Description	IGBT
Datasheet	RJP65S08DWT_Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: RJP65S08DWA, RJP65S08DWT. Please refer to the document for exact specifications by model.

RJP65S08DWA Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C).
High speed Switching.
Short circuit withstands time (10 s min. ) R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S08DWT-80 2 C Wafer: RJP65S08DWA-80 3 2 3 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°.

📁 RJP65S08DWA Similar Datasheet

RJP6085DPK - Silicon N-Channel IGBT (Renesas Technology)
RJP6085DPN - Silicon N-Channel IGBT (Renesas Technology)
RJP60D0DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
RJP020N06 - Drive Nch MOS FET (Rohm)
RJP020N06FRA - Power MOSFET (ROHM)
RJP020N06T100 - N-Channel MOSFET (VBsemi)
RJP2557DPK - IGBT (Renesas Technology)
RJP3053DPP - IGBT (Renesas Technology)

Other Datasheets by Renesas

Published: Jul 21, 2012 |