RJP65S05DWT, RJP65S05DWA - IGBT

Name: RJP65S05DWT
SKU: RJP65S05DWT-721577

Renesas

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RJP65S05DWT Datasheet Preview — This datasheet PDF includes multiple part numbers: RJP65S05DWT, RJP65S05DWA. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	RJP65S05DWT, RJP65S05DWA
Manufacturer	Renesas
File Size	128.30 KB
Description	IGBT
Datasheet	RJP65S05DWA_Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: RJP65S05DWT, RJP65S05DWA. Please refer to the document for exact specifications by model.

RJP65S05DWT Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C).
High speed Switching.
Short circuit withstands time (10 s min. ) R07DS0822EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S05DWT-80 2 C 3 Wafer: RJP65S05DWA-80 2 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100.

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Published: Jul 21, 2012 |