RJP1CS06DWT IGBT

Renesas

Description

Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJP1CS06DWT
Manufacturer: Renesas ↗
File Size: 129.68 KB
Datasheet: RJP1CS06DWT_Renesas.pdf
Description: IGBT

Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C)
* High speed switching
* Short circuit withstands time (10 s min. ) R07DS0829EJ0002 Rev.0.02 Jul 05, 2012 Outline Die: RJP1CS06DWT-80 2 C 3 Wafer: RJP1CS06DWA-80 2 1G 1 3 1.

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RJP1CS06DWT IGBT Renesas

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