RJK03C5DPA Built in SBD N Channel Power MOS FET

Renesas

Description

Preliminary Datasheet RJK03C5DPA 30V, 50A, 2.9m max.Built in SBD N Channel Power MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK03C5DPA
Manufacturer: Renesas ↗
File Size: 150.39 KB
Datasheet: RJK03C5DPA_Renesas.pdf
Description: Built in SBD N Channel Power MOS FET

Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS0940EJ0400 Rev.4.00 Mar 22, 2013 Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 5 6 7

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RJK03C5DPA Built SBD Channel Power MOS FET Renesas

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