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RJH65T04BDPM-A0 IGBT

RJH65T04BDPM-A0 Description

RJH65T04BDPM-A0 650V - 30A - IGBT Power Switching .

RJH65T04BDPM-A0 Features

* Trench gate and thin wafer technology
* Built in fast recovery diode in one package
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C)
* Quality grade: Standard Datasheet R07DS1366EJ0200 Rev.2.00 Oct.05.2022
* High speed

RJH65T04BDPM-A0 Applications

* Power Factor Correction circuit Key Performance Type RJH65T04BDPM-A0 VCES 650 V IC 30 A VCE(sat), TC=25C 1.5 V IF 50 A Tj 175 C Outline RENESAS Package code: PRSS0003ZP-A (Package name: TO-3PFP) C 1. Gate G 2. Collector 3. Emitter E 1 23 R07DS1366EJ0200 Rev.2.00 Oct.05.2022 Page 1 of

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