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RJH6087BDPK High Speed Power Switching

RJH6087BDPK Description

Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJH6087BDPK Features

* Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load)
* Low on-state voltage
* Fast recovery diode R07DS0389EJ0100 Rev.1.00 May 11, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate

RJH6087BDPK Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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High Speed Power Switching Renesas
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