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RJH60D3DPP-M0 IGBT

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Description

Preliminary Datasheet RJH60D3DPP-M0 600V - 17A - IGBT Application: Inverter R07DS0162EJ0400 Rev.4.00 Apr 19, 2012 .

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Features

* Short circuit withstand time (5 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode (100 ns typ. ) in one package
* Trench gate and thin wafer technology
* High speed switching tf = 70

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