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RJH65S04DPQ-A0 IGBT

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Description

Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application: Inverter .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology
* High speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Tj

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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