RJH1CV7DPQ-E0 - IGBT

Name: RJH1CV7DPQ-E0
SKU: RJH1CV7DPQ-E0-721543

Renesas

📥 Download Datasheet

RJH1CV7DPQ-E0 Datasheet Preview — Preview of RJH1CV7DPQ-E0 PDF

Datasheet Details

Part number	RJH1CV7DPQ-E0
Manufacturer	Renesas
File Size	110.56 KB
Description	IGBT
Datasheet	RJH1CV7DPQ-E0_Renesas.pdf

RJH1CV7DPQ-E0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C).
Built-in fast recovery diode (trr = 200 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 200 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0525EJ0400 Rev.4.00 Jan 19, 2012 Outline.

📁 RJH1CV7DPQ-E0 Similar Datasheet

RJH3047 - Silicon N-Channel IGBT High Speed Power Switching (ETC)
RJH3047ADPK - Silicon N-Channel IGBT High Speed Power Switching (ETC)
RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology)
RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
RJH60D2DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D2DPP-M0 - Silicon N Channel IGBT (Renesas Technology)

Other Datasheets by Renesas

RJH1CV7DPK - IGBT
RJH1CV5DPK - IGBT
RJH1CV5DPQ-E0 - IGBT
RJH1CV6DPK - IGBT
RJH1CV6DPQ-E0 - IGBT
RJH1CD5DPQ-A0 - High Speed Power Switching

Published: Jul 20, 2012 |