RJH1CV6DPQ-E0 IGBT

Renesas

Description

Preliminary Datasheet RJH1CV6DPQ-E0 1200V - 30A - IGBT Application: Inverter .

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Datasheet Specifications

Part number: RJH1CV6DPQ-E0
Manufacturer: Renesas ↗
File Size: 165.77 KB
Datasheet: RJH1CV6DPQ-E0_Renesas.pdf
Description: IGBT

Features

* Short circuit withstand time (5 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
* Built-in fast recovery diode (trr = 180 ns typ. ) in one package
* Trench gate and thin wafer technology
* High speed switching tf

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RJH1CV6DPQ-E0 IGBT Renesas

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