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RJH1CV5DPK - IGBT

Renesas

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Datasheet Details

Part number	RJH1CV5DPK
Manufacturer	Renesas
File Size	166.46 KB
Description	IGBT
Datasheet	RJH1CV5DPK_Renesas.pdf

RJH1CV5DPK Product details

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C).
Built-in fast recovery diode (trr = 170 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 165 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0746EJ0200 Rev.2.00 Jun 12, 2012 Outline.

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Published: Jul 20, 2012 |