NP82N06PDG N-CHANNEL POWER MOS FET

Renesas

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PDG SWITCHING N-CHANNEL POWER MOS FET .
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

📥 Download Datasheet

NP82N06PDG Datasheet Preview — Preview of NP82N06PDG PDF

Datasheet Specifications

Part number: NP82N06PDG
Manufacturer: Renesas ↗
File Size: 181.64 KB
Datasheet: NP82N06PDG-Renesas.pdf
Description: N-CHANNEL POWER MOS FET

Features

* Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
* Low Ciss Ciss = 5700 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 Gate to Source Voltage (VDS = 0 V) VGSS

NP82N06PDG Distributors

📁 Related Datasheet

NP82N06PLG NP82N055CHE NP82N055DHE NP82N055EHE NP82N055KHE NP82N055MUG

📌 All Tags

NP82N06PDG N-CHANNEL POWER MOS FET Renesas

Renesas NP82N06PDG-like datasheet