Description
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRI.
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A)
* Low Ciss: Ciss = 3500 pF TYP.
* Built-in gate protection diode 5
NP82N055KHE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Volta