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NP82N055DHE, NP82N055CHE - MOS FIELD EFFECT TRANSISTOR

NEC

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NP82N055DHE Datasheet Preview — This datasheet PDF includes multiple part numbers: NP82N055DHE, NP82N055CHE. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	NP82N055DHE, NP82N055CHE
Manufacturer	NEC
File Size	104.08 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP82N055CHE_NEC.pdf
Note	This datasheet PDF includes multiple part numbers: NP82N055DHE, NP82N055CHE. Please refer to the document for exact specifications by model.

NP82N055DHE Product details

Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A).
Low Ciss: Ciss = 3500 pF TYP.
Built-in gate protection diode 5 NP82N055KHE (TO-220AB).

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Other Datasheets by NEC

NP82N055CHE - MOS FIELD EFFECT TRANSISTOR
NP82N055EHE - MOS FIELD EFFECT TRANSISTOR
NP82N055KHE - MOS FIELD EFFECT TRANSISTOR
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Published: Sep 6, 2007 |