NP82N04NDG, NP82N04MDG - N-CHANNEL POWER MOS FET

Renesas

Datasheet Details

Part number	NP82N04NDG, NP82N04MDG
Manufacturer	Renesas ↗
File Size	344.64 KB
Description	N-CHANNEL POWER MOS FET
Datasheet	NP82N04MDG-Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: NP82N04NDG, NP82N04MDG. Please refer to the document for exact specifications by model.

The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Logic level.
Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A).
High current rating ID(DC) = ±82 A.
Low input capacitance Ciss = 6000 pF TYP.
Designed for automotive.

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Published: Aug 29, 2015 |