NP82N04PDG N-CHANNEL POWER MOS FET

Renesas

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04PDG SWITCHING N-CHANNEL POWER MOS FET .
The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

📥 Download Datasheet

NP82N04PDG Datasheet Preview — Preview of NP82N04PDG PDF

Datasheet Specifications

Part number: NP82N04PDG
Manufacturer: Renesas ↗
File Size: 217.06 KB
Datasheet: NP82N04PDG-Renesas.pdf
Description: N-CHANNEL POWER MOS FET

Features

* Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
* Low Ciss Ciss = 6000 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltage (VDS = 0 V) VGSS

NP82N04PDG Distributors

📁 Related Datasheet

NP82N055CHE NP82N055DHE NP82N055EHE NP82N055KHE NP82N055MUG NP82N055NUG

📌 All Tags

NP82N04PDG N-CHANNEL POWER MOS FET Renesas

Renesas NP82N04PDG-like datasheet