NP80N06ELD Features
* Channel Temperature 175 degree rated
* Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A)
* Low Ciss : Ciss = 2360 pF (TYP.)
* Built-in Gate protection diode ORDERING INFORMATION PART NUMBER
Datasheet Details
NP80N06ELD, NP80N06CLD
83.70 KB
N-channel power mos fet.
This datasheet PDF includes multiple part numbers: NP80N06ELD, NP80N06CLD.
Please refer to the document for exact specifications by model.
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NP80N06ELD Distributor
