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NP80N06NLG, NP80N06MLG MOSFET

NP80N06NLG Description

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

NP80N06NLG Features

* Logic level
* Built-in gate protection diode
* Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N06PLG RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ

NP80N06NLG Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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This datasheet PDF includes multiple part numbers: NP80N06NLG, NP80N06MLG. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
NP80N06NLG, NP80N06MLG
Manufacturer
NEC
File Size
452.69 KB
Datasheet
NP80N06MLG-NEC.pdf
Description
MOSFET
Note
This datasheet PDF includes multiple part numbers: NP80N06NLG, NP80N06MLG.
Please refer to the document for exact specifications by model.

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