RJE0616JSP P-Channel MOSFET

Renesas Technology

Description

RJE0616JSP -60V, -4A Silicon P Channel Thermal FET Power Switching Preliminary Datasheet R07DS1234EJ0200 (Previous: REJ03G1944-0100) Rev.2.00 Oct 27,.
This FET has the over temperature shut-down capability sensing to the junction temperature.

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Datasheet Specifications

Part number: RJE0616JSP
Manufacturer: Renesas ↗ Technology
File Size: 154.83 KB
Datasheet: RJE0616JSP_RenesasTechnology.pdf
Description: P-Channel MOSFET

Applications

* Built-in the over temperature shut-down circuit.
* High endurance capability against to the short circuit.
* Latch type shut down operation (need 0 voltage recovery).
* Built-in the current limitation circuit.
* Low on-resistance RDS(on) : 77 mΩ Typ, 90 mΩ M

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RJE0616JSP P-Channel MOSFET Renesas Technology

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