RJE0609JPD P-Channel MOSFET

Renesas Technology

Description

Preliminary Datasheet RJE0609JPD Silicon P Channel MOS FET Series Power Switching .
This FET has the over temperature shut-down capability sensing to the junction temperature.

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Datasheet Specifications

Part number: RJE0609JPD
Manufacturer: Renesas ↗ Technology
File Size: 105.20 KB
Datasheet: RJE0609JPD_RenesasTechnology.pdf
Description: P-Channel MOSFET

Features

* Logic level operation (
* 6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resi

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RJE0609JPD P-Channel MOSFET Renesas Technology

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