RJE0607JSP P-Channel MOSFET

Renesas Technology

Description

RJE0607JSP Silicon P Channel MOS FET Series Power Switching Preliminary Datasheet R07DS0123EJ0200 (Previous: REJ03G1876-0100) Rev.2.00 Sep 01, 2010 .
This FET has the over temperature shut-down capability sensing to the junction temperature.

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Datasheet Specifications

Part number: RJE0607JSP
Manufacturer: Renesas ↗ Technology
File Size: 95.46 KB
Datasheet: RJE0607JSP_RenesasTechnology.pdf
Description: P-Channel MOSFET

Features

* High endurance capability against to the short circuit.
* Built-in the over temperature shut-down circuit.
* Latch type shut down operation (need 0 voltage recovery).
* Built-in the current limitation circuit.
* Low on-resistance RDS(on) : 140 m Typ, 260 m Max (VGS =

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RJE0607JSP P-Channel MOSFET Renesas Technology

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