M6MGD13TW66CWG-P Datasheet - Renesas Technology

M6MGD13TW66CWG-P, CMOS FLASH MEMORY

www.DataSheet4U.com Preliminary Notice: This is not a final specification.
Some parametric limits are subject to change.
Renesas LSIs M6MGD13TW66CW

M6MGD13TW66CWG-P Datasheet Preview Page 2

Features

* Access Time Random Access/ Page Access Flash Mobile RAM Supply Voltage 70ns /25ns (Max. ) 85ns /25ns (Max. ) FM-VCC=2.7 ~ 3.0V Ta= -40 ~ 85 degree 72pin S-CSP, Ball pitch 0.80mm Outer-ball:Sn-Pb Ambient Temperature 64M-bit Mobile RAM is a 4,194,304 words high density RAM Package fabricated by CMOS te

M6MGD13TW66CWG-P_RenesasTechnology.pdf