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M6MGB162S4BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP

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M6MGB/T162S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) MITSUBISHI LSIs DESCRIPTION FEATURES The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi • Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I). SRAM 85ns (Max.) • Supply voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 1048576 words, 3.3V-only, and • Ambient temperature high performance non-volatile memory fabricated by CMOS W version Ta=-20 ~ 85°C technology for the peripheral circuit and DINOR(DIvided • Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch bit-line NOR) architecture for the memory cell.
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