Features
* DINOR (Divided bit-line NOR) architecture for the memory cell. Access Time Flash 85ns (Max. ) 8M-bit SRAM is a 1,048,576 bytes / 524,288 words SRAM 85ns (Max. ) asynchronous SRAM fabricated by silicon-gate CMOS technology. Supply Voltage VCC=2.7 ~ 3.0V The M6MGB/T321S8TP is a Stacked micro Multi Chip
Datasheet Details
Part number:
M6MGB321S8TP, M6MGT321S8TP
Manufacturer:
File Size:
92.87 KB
Description:
Cmos sram.
Note:
This datasheet PDF includes multiple part numbers: M6MGB321S8TP, M6MGT321S8TP.
Please refer to the document for exact specifications by model.
M6MGB321S8TP Distributors
📁 Related Datasheet
📌 All Tags
