HAT2199R - Silicon N-Channel Power MOSFET

Renesas Technology

Datasheet Details

Part number	HAT2199R
Manufacturer	Renesas ↗ Technology
File Size	104.26 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2199R_RenesasTechnology.pdf

High speed switching.
Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 13.0 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 4 G 1 234 56 7 8 DD D D SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0063-0300 Rev.3.00 Sep.23.2004 Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 11 I.

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Published: Nov 20, 2008 |