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HAT2197R Silicon N-Channel Power MOSFET

HAT2197R Description

HAT2197R Silicon N Channel Power MOS FET Power Switching .

HAT2197R Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 REJ03G0061-0201Z Rev.2.01 Nov.30.2016 4 G SSS 12 3 1, 2,

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Silicon N-Channel Power MOSFET Renesas Technology
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