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HAT2080R
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65
4
G
1234
5678 DDDD
SSS 123
REJ03G1180-0200 (Previous: ADE-208-1229)
Rev.2.00 Sep 07, 2005
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Rev.2.00 Sep 07, 2005 page 1 of 3
HAT2080R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
250
VGSS
±30
Drain current Drain peak current
ID ID (pulse) Note 1
1.7 13.6
Body to drain diode reverse drain current
IDR
1.7
Channel dissipation
Pch Note 2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
HAT2080R Datasheet
