Click to expand full text
HAT2085T
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 )
8765 4G
1234
5 6 78 D D DD
SSS 123
REJ03G0163-0500 Rev.5.00
Nov 27, 2007
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation
VDSS VGSS
ID ID (pulse) Note 1
IDR Pch Note 2
200 ±30 1.4 11.2 1.4 1.3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.