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HAT2080T
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PTSP0008JB-A (Package name: TSSOP-8 )
8765 4G
1234
5 6 78 D D DD
SSS 123
REJ03G0162-0500 (Previous: ADE-208-1026C)
Rev.5.00 Sep 07, 2005
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Rev.5.00 Sep 07, 2005 page 1 of 3
HAT2080T
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
250
VGSS
±30
Drain current Drain peak current
ID
1.2
ID (pulse) Note 1
9.6
Body to drain diode reverse drain current
IDR
1.2
Channel dissipation
Pch Note 2
1.3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
HAT2080T Datasheet
