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HAT2070R
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS (on) = 11 mΩ typ (at VGS = 10 V)
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65
4
G
1234
REJ03G1177-0400 (Previous: ADE-208-1226B)
Rev.4.00 Sep 07, 2005
5678 DDDD
SSS 123
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Rev.4.00 Sep 07, 2005 page 1 of 6
HAT2070R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
30
VGSS
±20
Drain current Drain peak current
ID
12
ID (pulse) Note 1
96
Body-drain diode reverse drain current
IDR
12
Channel dissipation
Pch Note 2
2.
HAT2070R Datasheet
