H7N1004FM - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Datasheet Details

Part number	H7N1004FM
Manufacturer	Renesas ↗ Technology
File Size	136.69 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H7N1004FM_RenesasTechnology.pdf

Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Aug.27.2003, page 1 of 9 H7N1004FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Pch Tch Tstg Note 3 Note 2 Note1 Value 100 ±20 25 100 100 15 22.5 25.

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Published: Nov 20, 2008 |