F20N60 Datasheet (ROUM) - 20A 600V N-channel Enhancement Mode Power MOSFET

F20N60, 20A 600V N-channel Enhancement Mode Power MOSFET

These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F.

Which accords with the RoHS standard.

VDSS = 600V RDS(on) （TYP)= 0.36Ω ID = 20A

F20N60 Features

* Fast Switching

* Low On Resistance(Rdson≤0.45Ω)

* Low Gate Charge(Typical:61nC)

* Low Reverse Transfer Capacitances(Typical:20pF)

* 100% Single Pulse Avalanche Energy Test

* 100% ΔVDS Test 3 Application

* Used in various power switching circuit for system miniaturizatio