F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

📥 Download Datasheet

F2002 Datasheet Preview — Preview of F2002 PDF

Datasheet Specifications

Part number: F2002
Manufacturer: Polyfet RF Devices
File Size: 37.91 KB
Datasheet: F2002_PolyfetRFDevices.pdf
Description: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R

F2002 Distributors

📁 Related Datasheet

F20A20CT F20A40CT F20A60CT F20C05 F20C05A F20C05C

📌 All Tags

F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

Polyfet RF Devices F2002-like datasheet