F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

📥 Download Datasheet

F2003 Datasheet Preview — Preview of F2003 PDF

Datasheet Specifications

Part number: F2003
Manufacturer: Polyfet RF Devices
File Size: 37.61 KB
Datasheet: F2003_PolyfetRFDevices.pdf
Description: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RA

F2003 Distributors

📁 Related Datasheet

F20A20CT F20A40CT F20A60CT F20C05 F20C05A F20C05C

📌 All Tags

F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

Polyfet RF Devices F2003-like datasheet