F2013 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

📥 Download Datasheet

F2013 Datasheet Preview — Preview of F2013 PDF

Datasheet Specifications

Part number: F2013
Manufacturer: Polyfet RF Devices
File Size: 38.20 KB
Datasheet: F2013_PolyfetRFDevices.pdf
Description: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2013 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATING

F2013 Distributors

📁 Related Datasheet

F20A20CT F20A40CT F20A60CT F20C05 F20C05A F20C05C

📌 All Tags

F2013 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

Polyfet RF Devices F2013-like datasheet