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RB215T-40NZ - Schottky Barrier Diode

Features

  • 1) Cathode common dual type. (TO-220) 2) Low IR 3) High reliability.
  • Construction Silicon epitaxial planar 215 4 Data Sheet.
  • Structure (1) (2) (3).
  • Packing Dimensions (Unit : mm) 7 540 34.5.
  • Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(.
  • 1) VRM VR Io Forward current surge peak (60Hz/1cyc) (.
  • 1) Junction temperature IFSM Tj Storage temperature Tstg (.
  • 1)Business.

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Datasheet Details

Part number RB215T-40NZ
Manufacturer ROHM
File Size 441.86 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB215T-40NZ Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky barrier diode RB215T-40NZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Cathode common dual type.(TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planar 215 4 Data Sheet Structure (1) (2) (3) ●Packing Dimensions (Unit : mm) 7 540 34.5 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) VRM VR Io Forward current surge peak (60Hz/1cyc) (*1) Junction temperature IFSM Tj Storage temperature Tstg (*1)Business frequencies, 1/2 Io per diode, Tc=121C Limits 45 40 20 100 150 40 to 150 Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. Typ. Max. - - 0.