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RB215T-90NZ - Schottky Barrier Diode

Features

  • type. (TO-220) 2) Low IR 3) High reliability.
  • Construction Silicon epitaxial planar RB215 ① T-90 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4   0.2 8.0 0.7±0.1 0.05 2.6±0.5 ROHM : TO220FN ① Manufacture Date Data Sheet.
  • Structure (1) (2) (3).
  • Packing Dimensions (Unit : mm) 7 540 34.5.
  • Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Reverse voltage (repetitive) VRM 90 Reverse voltage (DC) VR 90 Average rectified forward current(.

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Datasheet Details

Part number RB215T-90NZ
Manufacturer ROHM
File Size 382.00 KB
Description Schottky Barrier Diode
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Full PDF Text Transcription

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Schottky barrier diode RB215T-90NZ Applications General rectification (Common cathode dual chip) Dimensions (Unit : mm) 10.0±0.3     0.1 4.5±0.3     0.1 2.8±0.2     0.1 Features 1) Small power mold type.(TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planar RB215 ① T-90 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4   0.2 8.0 0.7±0.1 0.05 2.6±0.5 ROHM : TO220FN ① Manufacture Date Data Sheet Structure (1) (2) (3) ●Packing Dimensions (Unit : mm) 7 540 34.
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