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RB215T-90 - Schottky barrier diode

Features

  • 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability ① 8.0±0.2 12.0±0.2 zConstruction Silicon epitaxial planar 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date zAbsolute maximum ratings (Ta=25°C) Parameter 13.5MIN 15.0±0.4 　 0.2 8.0 Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (.
  • 1) Forward current surge peak (60Hz1cyc) (.
  • 1) Junction temperature Storage temperature (.
  • 1)Tc=100℃max Per chip : Io/2 zElec.

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Datasheet Details

Part number RB215T-90
Manufacturer ROHM
File Size 190.42 KB
Description Schottky barrier diode
Datasheet download datasheet RB215T-90 Datasheet
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Full PDF Text Transcription

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RB215T-90 Diodes Schottky barrier diode RB215T-90 zApplications General rectification (Common cathode dual chip) zExternal dimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 zStructure 1.2 1.3 5.0±0.2 zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability ① 8.0±0.2 12.0±0.2 zConstruction Silicon epitaxial planar 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date zAbsolute maximum ratings (Ta=25°C) Parameter 13.5MIN 15.0±0.4 　 0.2 8.
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