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SPA1118Z POWER AMPLIFIER

SPA1118Z Description

SPA1118Z 850 MHz 1Watt Power Amplifier with Active Bias SPA1118Z 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product.
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

SPA1118Z Features

* High Linearity Performance
* +21dBm IS-95 Channel Power at -55dBc ACP
* +48dBm OIP3 Typ.
* On-Chip Active Bias Control
* Patented High Reliability GaAs HBT Technology

SPA1118Z Applications

* Optimum Technology Matching® Applied

📥 Download Datasheet

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Datasheet Details

Part number
SPA1118Z
Manufacturer
RF Micro Devices
File Size
253.15 KB
Datasheet
SPA1118Z-RFMicroDevices.pdf
Description
POWER AMPLIFIER

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POWER AMPLIFIER RF Micro Devices
RF Micro Devices SPA1118Z-like datasheet