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SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

SPA1526Z Description

SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT SPA1526ZAmplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 NOT FOR NEW dB.
RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier.

SPA1526Z Features

* an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET
* InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT I

SPA1526Z Applications

* Macro/Micro-Cell Driver Stage
* Pico-Cell Output Stage
* GSM, CDMA, TDSCDMA, WCDMA, IS-95
* Single and Multi-Carrier Appli- cations Parameter Small Signal Power Gain Output Power at 1dB Compression Output Third Order Intercept Point, 18dBm per Tone, 1MHz Spacing WCDMA Channel Powe

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Datasheet Details

Part number
SPA1526Z
Manufacturer
RFMD
File Size
573.23 KB
Datasheet
SPA1526Z-RFMD.pdf
Description
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

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0.7GHz 2.2GHz InGaP HBT AMPLIFIER RFMD
RFMD SPA1526Z-like datasheet