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SPA12N50C3 N-Channel MOSFET

SPA12N50C3 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA12N50C3 *.

SPA12N50C3 Features

* With TO-220F Package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPA12N50C3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ 11.6 (VGS at 10V) Tc=100℃ 7 A IDM Drain Current-Single Pulsed 34.8 A PD Total Dis

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Datasheet Details

Part number
SPA12N50C3
Manufacturer
INCHANGE
File Size
218.82 KB
Datasheet
SPA12N50C3-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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