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QPA2211 - 10 W GaN Power Amplifier

Datasheet Summary

Description

Qorvo's QPA2211 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15).

25 dBc intermodulation distortion products and 24 dB small signal gain.

Features

  • Frequency Range: 27.5 .
  •  31 GHz.
  • PSAT (PIN = 24 dBm): 41 dBm.
  • PAE (PIN = 24 dBm): 25 %.
  • Power Gain (PIN = 24 dBm): 17 dB.
  • Small Signal Gain: 24 dB.
  • IMD3 (POUT = 34 dBm/tone):.
  • 25 dBc.
  • Bias: VD = 22 V, IDQ = 280 mA.
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm.
  • Package base is pure Cu offering superior thermal management Functional Block Diagram Performance is typical across frequency. Please reference.

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Datasheet Details

Part number QPA2211
Manufacturer Qorvo
File Size 772.64 KB
Description 10 W GaN Power Amplifier
Datasheet download datasheet QPA2211 Datasheet
Additional preview pages of the QPA2211 datasheet.

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Full PDF Text Transcription

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QPA2211 27.5 – 31 GHz 10 W GaN Power Amplifier Product Description Qorvo's QPA2211 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 27.5 to 31 GHz, it achieves 5 W linear power with lower than −25 dBc intermodulation distortion products and 24 dB small signal gain. Saturated output power is greater than 10 W with and associated poweradded efficiency of 25%. QPA2211 is packaged in a 10-lead 15 x 15 mm bolt-down package with a Cu base for superior thermal management. To simplify system integration, the QPA2211 is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. QPA2211 is ideally suited to support satellite communications and 5G infrastructure. Lead-free and RoHS compliant.
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