QL68J6S-C, QL68J6S-A Datasheet (QSI)

QL68J6S-C, QL68J6S-A, LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL68J6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer WWW.QSILaser.com QL68J6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd 2007-11-22 OVERVIEW QL68J6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well structure.

It's an attractive light source, with a typical light output power of 50mW for opto-electronic devices such as Industrials.

QL68J6S-C Features

* Visible Light Output : λp = 685nm Optical Power Output : 50 mW CW Package Type : TO-18 (5.6mmφ) Built-in Photo Diode for Monitoring Laser Output

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathod, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathod (Fig. 3)