QL68I6S-B Datasheet - QSI

QL68I6S-B LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL68I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer WWW.QSILaser.com QL68I6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd 2004. Rev 1. OVERVIEW QL68I6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for opto-electronic devices such as Industrials. <.

QL68I6S-B Features

* Visible Light Output : λp = 685nm Optical Power Output : 30 mW CW Package Type : TO-18 (5.6mmφ) Built-in Photo Diode for Monitoring Laser Output

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathod, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathod (Fig. 3)

QL68I6S-B Datasheet (164.51 KB)