The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL68I6S-A/B/C Signature of Approval
Approved by Checked by Issued by
Approval by Customer
WWW.QSILaser.com
QL68I6S-A/B/C
InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd
2004. Rev 1.
♦ OVERVIEW
QL68I6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for opto-electronic devices such as Industrials.
♦ APPLICATION
Industrials Laser Module
♦ FEATURES
Visible Light Output : λp = 685nm
Optical Power Output : 30 mW CW
Package Type
: TO-18 (5.6mmφ)
Built-in Photo Diode for Monitoring Laser Output
♦ ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathod, PD anode (Fig.
QL68I6S-A Datasheet
