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PDR4906 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V, 50A, RDS(ON)=8.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number PDR4906
Manufacturer Potens semiconductor
File Size 457.23 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDR4906 Datasheet

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Full PDF Text Transcription

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40V N-Channel MOSFETs PDR4906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO251 Pin Configuration D D G DS G S BVDSS 40V RDSON 8.5m ID 50A Features  40V, 50A, RDS(ON)=8.
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