PDN3612S Datasheet (Potens semiconductor)

PDN3612S, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDN3612S Features

* 30V, 5.3 A, RDS(ON) =32mΩ@VGS = 4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for 2.5V Gate Drive Applications Applications

* Notebook

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbo