PDB2116M - N+P Dual Channel MOSFETs

Potens semiconductor

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Datasheet Details

Part number	PDB2116M
Manufacturer	Potens semiconductor
File Size	560.34 KB
Description	N+P Dual Channel MOSFETs
Datasheet	PDB2116M-Potenssemiconductor.pdf

PDB2116M Product details

Description

These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 90m 3.8A -2.5A provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.DFN2X3 Dual Pin Configuration D1 D1 D2 D2 D1 G1 G S1 G1 S2 G2

Features

Fast switching.
Green Device Available.
Suit for 1.8V Gate Drive.

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Published: Aug 8, 2018 |