These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
| Part number | PDB2116S |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 435.94 KB |
| Description | N+P Dual Channel MOSFET |
| Datasheet |
 PDB2116S Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| PDB24 | 24mm Rotary Potentiometer | BOURNS |
| PDB241-D | 24 mm Rotary Potentiometer | BOURNS |
| PDB241-E | 24 mm Rotary Potentiometer | BOURNS |
| PDB241-GNL | Guitar Potentiometer | BOURNS |
| PDB241-GTR | 24mm Guitar Potentiometer | BOURNS |
| Part Number | Description |
|---|---|
| PDB2116M | N+P Dual Channel MOSFETs |
| PDB2216S | Dual N-Channel MOSFET |
| PDB2309L | P-Channel MOSFET |
| PDB0854S | Dual N-Channel MOSFET |
| PDB3810H | N-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
