PDB2216S Datasheet (Potens semiconductor)

PDB2216S, Dual N-Channel MOSFET

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod

PDB2216S Features

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Networking

* Hand-held Instruments S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-S