Datasheet4U Logo Datasheet4U.com

PDB2216S - Dual N-Channel MOSFET

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

  • Fast switching.
  • Green Device Available.
  • Suit for 1.8V Gate Drive.

📥 Download Datasheet

Datasheet Details

Part number PDB2216S
Manufacturer Potens semiconductor
File Size 717.23 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet PDB2216S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PDB24 24mm Rotary Potentiometer BOURNS
PDB241-D 24 mm Rotary Potentiometer BOURNS
PDB241-E 24 mm Rotary Potentiometer BOURNS
PDB241-GNL Guitar Potentiometer BOURNS
PDB241-GTR 24mm Guitar Potentiometer BOURNS

Other Datasheets by Potens semiconductor

Part Number Description
PDB2116M N+P Dual Channel MOSFETs
PDB2116S N+P Dual Channel MOSFET
PDB2309L P-Channel MOSFET
PDB0854S Dual N-Channel MOSFET
PDB3810H N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
20V Dual N-Channel MOSFETs PDB2216S General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN2X2 Dual 2EP Pin Configuration ˙ S1 G1 D2 D1 G2 S2 D1 G G1 G2 D2 BVDSS 20V RDSON 40m ID 5.2A Features  Fast switching  Green Device Available  Suit for 1.
Published: |