MX1011B200Y Microwave power transistor

Philips

Description

DISCRETE SEMICONDUCTORS DATA SHEET MX1011B200Y Microwave power transistor Product speciﬁcation Supersedes data of January 1995 1997 Feb 18 Philips .
1 collector 2 emitter 3 base connected to ﬂange ηC (%) ≥45 APPLICATIONS Intended for use in common base class C broadband pulsed power amplifiers fo.

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Datasheet Specifications

Part number: MX1011B200Y
Manufacturer: Philips
File Size: 88.46 KB
Datasheet: MX1011B200Y-Philips.pdf
Description: Microwave power transistor

Applications

* up to 100 µs pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes very stable characteristics and excellent lifetime

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MX1011B200Y Microwave power transistor Philips

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